Patent · US Active

Hybrid dielectric material for thin film transistors

US8835909B2 · kind B2 · utility

6Cited by

10References

22Claims

0Family size

Assignee

THE TRUSTEES OF PRINCETON UNIVERSITY · US

Inventors

Lin Han · San Jose, US
Prashant Mandlik · Lawrenceville, US
Sigurd Wagner · Princeton, US

Key dates

Filing date	Jul 30, 2009
Grant date	Sep 16, 2014
Priority date	—
Expiry date	Apr 28, 2030

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/02274
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Thin-film transistors are made using an organosilicate glass (OSG) as an insulator material. The organosilicate glasses may be SiO2-silicone hybrid materials deposited by plasma-enhanced chemical vapor deposition from siloxanes and oxygen. These hybrid materials may be employed as the gate dielectric, as a subbing layer, and/or as a back channel passivating layer. The transistors may be made in any conventional TFT geometry.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.