Thin film transistor substrate having metal oxide and method for manufacturing
US8835919B2 · kind B2 · utility
1Cited by
2References
24Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Dec 26, 2012 |
| Grant date | Sep 16, 2014 |
| Priority date | — |
| Expiry date | Jan 17, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/60
Abstract
A thin film transistor substrate and a method for manufacturing the same are disclosed. The thin film transistor substrate includes a gate electrode disposed on a substrate, a gate insulating film disposed on the gate electrode, an active layer disposed on the gate insulating film and including metal oxide, a source electrode contacted with one side of the active layer and a pixel electrode contacted with the other side of the active layer; and an etch stopper interposed between the source electrode and the pixel electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.