Stacked LED device with diagonal bonding pads
US8835948B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 19, 2012 |
| Grant date | Sep 16, 2014 |
| Priority date | — |
| Expiry date | Jan 31, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/857
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor light emitting device includes a substrate and a first epitaxial structure over the substrate. The first epitaxial structure includes a first doped layer, a first light emitting layer, and a second doped layer. A first electrode is coupled to the first doped layer. A second electrode is coupled to the second doped layer facing the same direction as the first electrode. A second epitaxial structure includes a third doped layer, a second light emitting layer, and a fourth doped layer. A third electrode is coupled to the third doped layer facing the same direction as the first electrode. A fourth electrode is coupled to the fourth doped layer facing the same direction as the first electrode. An adhesive layer is between the first epitaxial structure and the second epitaxial structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.