Semiconductor light emitting device and method for manufacturing the same

US8835954B2 · kind B2 · utility

Assignee

• Kabushiki Kaisha Toshiba · JP

Inventors

• Akira Fujimoto · Miyazaki, JP
• Ryota Kitagawa · Setagaya, JP
• Kumi Masunaga · Yokohama, JP
• Kenji Nakamura · Hirakata, JP
• Tsutomu Nakanishi · Osaka, JP
• Koji Asakawa · Kawasaki, JP
• Takanobu Kamakura · Itoshima, JP
• Shinji Nunotani · Itoshima, JP

Key dates

• Filing date: Aug 30, 2011
• Grant date: Sep 16, 2014
• Expiry date: Sep 17, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/032

Abstract

According to one embodiment, a semiconductor light emitting device includes a structure including a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer. The device also includes an electrode layer provided on the second semiconductor layer side of the structure. The electrode layer includes a metal portion with a thickness of not less than 10 nanometers and not more than 100 nanometers. A plurality of openings pierces the metal portion, each of the openings having an equivalent circle diameter of not less than 10 nanometers and not more than 5 micrometers. The device includes an inorganic film providing on the metal portion and inner surfaces of the openings, the inorganic film having transmittivity with respect to light emitted from the light emitting layer.