Semiconductor wafer, photoelectric conversion device, method of producing semiconductor wafer, and method of producing photoelectric conversion device
US8835980B2 · kind B2 · utility
1Cited by
7References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 2, 2011 |
| Grant date | Sep 16, 2014 |
| Priority date | — |
| Expiry date | May 26, 2032 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
Provided is a semiconductor wafer including: a base wafer containing silicon; an inhibitor that has been formed on the base wafer, has an aperture in which a surface of the base wafer is exposed, and inhibits crystal growth; and a light-absorptive structure that has been formed inside the aperture in contact with a surface of the base wafer exposed inside the aperture, where the light-absorptive structure includes a first semiconductor and a second semiconductor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.