Compositionally graded heterojunction semiconductor device and method of making same

US8835998B2 · kind B2 · utility

Assignee

• University of Notre Dame du Lac · US

Inventors

• John David Simon · Rochester Hills, US
• Debdeep Jena · Ithaca, US
• Huili (Grace) Xing · South Bend, US

Key dates

• Filing date: Dec 14, 2010
• Grant date: Sep 16, 2014
• Expiry date: Dec 14, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/8503
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A compositionally graded semiconductor device and a method of making same are disclosed that provides an efficient p-type doping for wide bandgap semiconductors by exploiting electronic polarization within the crystalline lattice. The compositional graded semiconductor graded device includes a graded heterojunction interface that exhibits a 3D bound polarization-induced sheet charge that spreads in accordance with ρπ(z)=−∇·P(z), where ρπ(z) is a volume charge density in a polar (z) direction, and ∇ is a divergence operator, wherein the graded heterojunction interface is configured to exhibit substantially equivalent conductivities along both lateral and vertical directions relative to the graded heterojunction interface.