Method and apparatus for a lateral radiation detector
US8836069B2 · kind B2 · utility
3Cited by
6References
8Claims
0Family size
Inventors
Key dates
| Filing date | Apr 22, 2010 |
| Grant date | Sep 16, 2014 |
| Priority date | — |
| Expiry date | Aug 9, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F30/2275
Abstract
A lateral Metal-Semiconductor-Metal (MSM) Photodetector (PD) is based on amorphous selenium (a-Se). It has low dark current, high photoconductive gain towards short wavelengths, and high speed of operation up to several KHz. From processing point of view, a lateral structure is more attractive due to ease of fabrication as well as compatibility with conventional thin-film transistor (TFT) processes. The lateral a-Se MSM PD therefore has potentials in a variety of optical sensing applications particularly in indirect X-ray imaging utilizing scintillators and ultraviolet (UV) imaging for life sciences.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.