Semiconductor system including a schottky diode
US8836072B2 · kind B2 · utility
3Cited by
4References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 9, 2010 |
| Grant date | Sep 16, 2014 |
| Priority date | — |
| Expiry date | Oct 22, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/106
Abstract
A semiconductor system is described, which includes a trench junction barrier Schottky diode having an integrated p-n type diode as a clamping element, which is suitable for use in motor vehicle generator system, in particular as a Zener diode having a breakdown voltage of approximately 20V. In this case, the TJBS is a combination of a Schottky diode and a p-n type diode. Where the breakdown voltages are concerned, the breakdown voltage of the p-n type diode is lower than the breakdown voltage of Schottky diode. The semiconductor system may therefore be operated using high currents at breakdown.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.