Solid-state imaging apparatus having pixels with plural semiconductor regions
US8836833B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 14, 2011 |
| Grant date | Sep 16, 2014 |
| Priority date | — |
| Expiry date | Nov 24, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/1898
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A solid-state imaging apparatus has a pixel array in which a plurality of pixels are arranged to form a plurality of rows and a plurality of columns, and a plurality of column signal lines are arranged, wherein each of the plurality of pixels includes a photoelectric converter including a first well formed in a semiconductor substrate and having a first conductivity type, and an impurity region arranged in the first well and having a second conductivity type different from the first conductivity type, and an in-pixel readout circuit which outputs, to the column signal line, a signal corresponding to charges generated in the photoelectric converter, the in-pixel readout circuit including a circuit element arranged in a second well having the first conductivity type, and wherein the first well and the second well are isolated by a semiconductor region having the second conductivity type.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.