Patent · US Active

Circuit for generating write signal, variable resistance memory device, and method for programming variable resistance memory

US8837197B2 · kind B2 · utility

3Cited by
4References
19Claims
0Family size

Assignee

Inventors

Key dates

Filing dateFeb 9, 2012
Grant dateSep 16, 2014
Priority date
Expiry dateJan 19, 2033

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11C2013/0092
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

A circuit for generating a write signal includes a pre-emphasis signal generator that receives location information of a to-be-programmed memory cell and generates a pre-emphasis signal depending on the location information of the to-be-programmed memory cell, and a write driver that generates a program signal corresponding to data to be programmed in the to-be-programmed memory cell. A write signal is generated by combining the program signal with the pre-emphasis signal supplied from the pre-emphasis signal generator, and the write signal output to the to-be-programmed memory cell.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.