Circuit for generating write signal, variable resistance memory device, and method for programming variable resistance memory
US8837197B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 9, 2012 |
| Grant date | Sep 16, 2014 |
| Priority date | — |
| Expiry date | Jan 19, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2013/0092
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A circuit for generating a write signal includes a pre-emphasis signal generator that receives location information of a to-be-programmed memory cell and generates a pre-emphasis signal depending on the location information of the to-be-programmed memory cell, and a write driver that generates a program signal corresponding to data to be programmed in the to-be-programmed memory cell. A write signal is generated by combining the program signal with the pre-emphasis signal supplied from the pre-emphasis signal generator, and the write signal output to the to-be-programmed memory cell.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.