Lasers with InGaAs quantum wells with InGaP barrier layers with reduced decomposition

US8837547B2 · kind B2 · utility

Assignee

• FINISAR CORPORATION · US

Inventors

• Ralph H. Johnson · Plano, US
• Jerome K. Wade · Austin, US

Key dates

• Filing date: Mar 19, 2012
• Grant date: Sep 16, 2014
• Expiry date: Mar 19, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01S5/34373
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

A method for preparing a VCSEL can use MBE for: growing a first conduction region over a first mirror region; growing an active region over the first conduction region opposite of the first mirror region, including: (a) growing a quantum well barrier having In1-xGaxP(As); (b) growing an transitional layer having one or more of GaP, GaAsP, or GaAs; (c) growing a quantum well layer having In1-zGazAsyP1-y; (d) growing another transitional layer have one or more of GaP, GaAsP, or GaAs; (e) repeating processes (a) through (d) over a plurality of cycles; and (f) growing a quantum well barrier having In1-xGaxP(As); growing a second conduction region over the active region opposite of the first conduction region, wherein: x ranges from 0.77 to 0.50; y ranges from 0.7 to 1; and z ranges from 0.7 to 0.99.