Continuous growth of single-wall carbon nanotubes using chemical vapor deposition
US8840724B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 23, 2008 |
| Grant date | Sep 23, 2014 |
| Priority date | — |
| Expiry date | Apr 2, 2029 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/249953
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The invention relates to a chemical vapor deposition process for the continuous growth of a carbon single-wall nanotube where a carbon-containing gas composition is contacted with a porous membrane and decomposed in the presence of a catalyst to grow single-wall carbon nanotube material. A pressure differential exists across the porous membrane such that the pressure on one side of the membrane is less than that on the other side of the membrane. The single-wall carbon nanotube growth may occur predominately on the low-pressure side of the membrane or, in a different embodiment of the invention, may occur predominately in between the catalyst and the membrane. The invention also relates to an apparatus used with the carbon vapor deposition process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.