Solution-based synthesis of CsSnI3 thin films
US8840809B2 · kind B2 · utility
1Cited by
3References
13Claims
0Family size
Inventors
Key dates
| Filing date | Jun 7, 2012 |
| Grant date | Sep 23, 2014 |
| Priority date | — |
| Expiry date | Sep 10, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/822
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
This invention discloses a solution-based synthesis of cesium tin tri-iodide (CsSnI3) film. More specifically, the invention is directed to a solution-based spray-coating synthesis of cesium tin tri-iodide (CsSnI3) thin films. This invention is also directed to effective and inexpensive methods to synthesize the thin CsSnI3 films on large-area substrates such as glass, ceramics, glass, ceramic, silicon, and metal foils. CsSnI3 films are ideally suited for a wide range of applications such as light emitting and photovoltaic devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.