Method for producing a doped organic semiconducting layer

US8841153B2 · kind B2 · utility

Assignee

• OSRAM Opto Semiconductors GmbH · DE

Inventors

• Britta Goeoetz · Regensburg, DE
• Thomas Dobbertin · Regensburg, DE
• Karsten Diekmann · Rattenberg, DE
• Andreas Kanitz · Edenkoben, DE
• Guenter Schmid · Hemhofen, DE
• Arvid Hunze · Erlangen, DE

Key dates

• Filing date: Feb 25, 2009
• Grant date: Sep 23, 2014
• Expiry date: Feb 25, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10K85/6572

Abstract

A process is provided for producing a doped organic semiconductive layer, comprising the process steps of A) providing a matrix material, B) providing a dopant complex, and C) simultaneously applying the matrix material and the dopant complex to a substrate by vapor deposition, wherein, in process step C), the dopant complex is decomposed and the pure dopant is intercalated into the matrix material.