Patent · US Active

Method for the production of micro-electromechanical semiconductor component

US8841156B2 · kind B2 · utility

2Cited by

6References

2Claims

0Family size

Assignee

ELMOS SEMICONDUCTOR SE · DE

Inventor

Bernd Burchard · Dortmund, DE

Key dates

Filing date	Jan 10, 2011
Grant date	Sep 23, 2014
Priority date	—
Expiry date	Feb 13, 2031

Classification

Technology area (CPC H)Electricity
CPC primaryH10D48/50
WIPO fieldMicro-structural and nano-technology
WIPO sectorChemistry

Abstract

The micro-electromechanical semiconductor component is provided with a first semiconductor substrate, which has an upper face, and a second semiconductor substrate, which has an upper face. Both semiconductor substrates are bonded resting on the upper faces thereof. A cavity is introduced into the upper face of at least one of the two semiconductor substrates. The cavity is defined by lateral walls and opposing top and bottom walls, which are formed by the two semiconductor substrates. The top or the bottom wall acts as a reversibly deformable membrane and an opening extending through the respective semiconductor substrate is arranged in the other of said two walls of the cavity.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.