Oxide semiconductor thin-film transistor
US8841663B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 5, 2011 |
| Grant date | Sep 23, 2014 |
| Priority date | — |
| Expiry date | Feb 4, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6757
Abstract
A thin-film transistor includes a gate electrode, a source electrode, a drain electrode, a gate insulation layer and an oxide semiconductor pattern. The source and drain electrodes include a first metal element with a first oxide formation free energy. The oxide semiconductor pattern has a first surface making contact with the gate insulation layer and a second surface making contact with the source and drain electrodes to be positioned at an opposite side of the first surface. The oxide semiconductor pattern includes an added element having a second oxide formation free energy having an absolute value greater than or equal to an absolute value of the first oxide formation free energy, wherein an amount of the added element included in a portion near the first surface is zero or smaller than an amount of the added element included in a portion near the second surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.