Thin-film transistor device and method for manufacturing thin-film transistor device
US8841673B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jan 16, 2013 |
| Grant date | Sep 23, 2014 |
| Priority date | — |
| Expiry date | Jan 16, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/40
Abstract
A thin-film transistor device includes: a gate electrode above a substrate; a gate insulating film on the gate electrode; a crystalline silicon thin film above the gate insulating film; a first semiconductor film above the crystalline silicon thin film; a pair of second semiconductor films above the first semiconductor film; a source electrode over one of the second semiconductor films; and a drain electrode over an other one of the second semiconductor films. The first semiconductor film is provided on the crystalline silicon thin film. A relationship ECP<EC1 is satisfied where ECP and EC1 denote energy levels at lower ends of conduction bands of the crystalline silicon thin film and the first semiconductor film, respectively.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.