Nano-pillar transistor fabrication and use
US8841712B2 · kind B2 · utility
3Cited by
4References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 28, 2013 |
| Grant date | Sep 23, 2014 |
| Priority date | — |
| Expiry date | Mar 28, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R1/07342
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A field effect nano-pillar transistor has a pillar shaped gate element incorporating a biomimitec portion that provides various advantages over prior art devices. The small size of the nano-pillar transistor allows for advantageous insertion into cellular membranes, and the biomimitec character of the gate element operates as an advantageous interface for sensing small amplitude voltages such as transmembrane cell potentials. The nano-pillar transistor can be used in various embodiments to stimulate cells, to measure cell response, or to perform a combination of both actions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.