Semiconductor device and method for manufacturing the same
US8841719B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 10, 2012 |
| Grant date | Sep 23, 2014 |
| Priority date | — |
| Expiry date | Jan 10, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/62
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes: a semiconductor substrate; an interlayer film on the substrate; a surface electrode on the interlayer film; a surface pad on the surface electrode; a backside electrode on the substrate; an element area including a cell portion having a vertical semiconductor element and a removal portion having multiple contact regions; and an outer periphery area. The surface electrode in the removal portion is electrically coupled with each contact region through a first contact hole in the interlayer film. The surface electrode in the cell portion is electrically coupled with the substrate through a second contact hole in the interlayer film. A part of the surface electrode in the removal portion facing each contact region is defined as a contact portion. The surface electrode includes multiple notches on a shortest distance line segment between each contact portion and the surface pad.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.