ESD protection of an RF PA semiconductor die using a PA controller semiconductor die

US8842399B2 · kind B2 · utility

Assignee

• RF Micro Devices, Inc. · US

Inventors

• David E. Jones · Layton, US
• William David Southcombe · San Diego, US
• Chris Levesque · Willow View Lane, US
• Scott Yoder · Fuquay-Varina, US
• Terry J. Stockert · Cedar Rapids, US

Key dates

• Filing date: Nov 3, 2011
• Grant date: Sep 23, 2014
• Expiry date: Nov 3, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H02H9/046
• WIPO field: Basic communication processes
• WIPO sector: Electrical engineering

Abstract

A power amplifier (PA) controller semiconductor die and a first radio frequency (RF) PA semiconductor die are disclosed. The PA controller semiconductor die includes a first electro-static discharge (ESD) protection circuit, which ESD protects and provides a first ESD protected signal. The RF PA semiconductor die receives the first ESD protected signal. In one embodiment of the PA controller semiconductor die, the first ESD protected signal is an envelope power supply signal. The PA controller semiconductor die may be a Silicon complementary metal-oxide-semiconductor (CMOS) semiconductor die and the RF PA semiconductor die may be a Gallium Arsenide semiconductor die.