Semiconductor laser element and method of manufacturing semiconductor laser element
US8842707B2 · kind B2 · utility
3Cited by
4References
11Claims
0Family size
Assignee
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Key dates
| Filing date | Mar 3, 2010 |
| Grant date | Sep 23, 2014 |
| Priority date | — |
| Expiry date | Mar 3, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/3427
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor laser element includes: a window region including a disordered portion formed by diffusion of a group-III vacancy, the diffusion promoted by providing on the window region a promoting film that absorbs a predetermined atom; a non-window region including an active layer of a quantum well structure; and a difference equal to or larger than 50 meV between an energy band gap in the window region and an energy band gap in the non-window region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.