Optical modulator formed on bulk-silicon substrate
US8842942B2 · kind B2 · utility
6Cited by
4References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 24, 2011 |
| Grant date | Sep 23, 2014 |
| Priority date | — |
| Expiry date | Oct 28, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F1/212
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An optical modulator comprises a bulk-silicon substrate comprising a trench having a predetermined width and a predetermined depth. A bottom cladding layer is formed in the trench, and a plurality of waveguides and a phase modulation unit are formed on the bottom cladding layer. A top cladding layer is formed on the plurality of waveguides and the phase modulation unit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.