CMOS switching circuitry of a transmitter module
US8843083B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jul 9, 2012 |
| Grant date | Sep 23, 2014 |
| Priority date | — |
| Expiry date | Feb 12, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH04B1/0458
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
Transmit modules typically constitute passive matching circuitry, harmonic trap filters and an antenna switch to provide isolation between the transmit bands as well as between transmit and receive functions. In complementary metal-oxide semiconductor (CMOS) processes the switch function is difficult to implement as a large voltage swing may result in breakdown of the MOS oxide, drain diode, source diode as well as substrate diodes. Therefore a switching function is provided at a node that has low impedance during transmit that limits the voltage swing that the MOS switches experience. The approach is particularly useful, but not limited to, half duplex transmissions such as those used in global system for mobile (GSM) communication, enhanced data for GSM Evolution (EDGE), and time division synchronous code division multiple access (TDSCDMA).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.