Thick film paste containing bismuth-tellurium-oxide and its use in the manufacture of semiconductor devices
US8845932B2 · kind B2 · utility
2Cited by
2References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 26, 2012 |
| Grant date | Sep 30, 2014 |
| Priority date | — |
| Expiry date | Jan 6, 2033 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/50
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The present invention is directed to an electroconductive thick film paste composition comprising electrically conductive Ag, a second electrically conductive metal selected from the group consisting of Ni, Al and mixtures thereof and a Pb-free bismuth-tellurium-oxide all dispersed in an organic medium. The present invention is further directed to an electrode formed from the thick film paste composition and a semiconductor device and, in particular, a solar cell comprising such an electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.