Method of fabricating a FinFET device
US8846490B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 26, 2013 |
| Grant date | Sep 30, 2014 |
| Priority date | — |
| Expiry date | Apr 26, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a fin structure of a semiconductor device includes providing a substrate, creating a mandrel pattern over the substrate, depositing a first spacer layer over the mandrel pattern, and removing portions of the first spacer layer to form first spacer fins. The method also includes performing a first fin cut process to remove a subset of the first spacer fins, depositing a second spacer layer over the un-removed first spacer fins, and removing portions of the second spacer layer to form second spacer fins. The method further includes forming fin structures, and performing a second fin cut process to remove a subset of the fin structures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.