Method of growing semiconductor micro-crystalline islands on an amorphous substrate
US8846505B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Mar 9, 2010 |
| Grant date | Sep 30, 2014 |
| Priority date | — |
| Expiry date | Mar 5, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02628
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for growing islands of semiconductor monocrystals from a solution on an amorphous substrate includes the procedures of depositing a semiconductor-metal mixture layer, applying lithography and etching for forming at least one platform, heating the at least one platform, and saturating the semiconductor-metal solution until a monocrystal of the semiconductor component is formed. The procedure of depositing a semiconductor-metal mixture layer, includes a semiconductor component and at least one other metal component, is performed on top of the amorphous substrate. The procedure of applying lithography and etching to the semiconductor-metal mixture layer and a portion of the amorphous substrate is performed for forming at least one platform, the at least one platform having a top view shape corresponding to crystal growth direction and habit respective of the semiconductor component. The procedure of heating the at least one platform is performed until the semiconductor-metal mixture layer of the at least one platform is melted and becomes a semiconductor-metal solution. The procedure of saturating the semiconductor-metal solution is performed until a monocrystal of the semico…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.