Patent · US Active

Multilayer construction

US8846518B2 · kind B2 · utility

0Cited by

7References

14Claims

0Family size

Assignee

3M INNOVATIVE PROPERTIES COMPANY · US

Inventors

Jun-Ying Zhang · Perrysburg, US
Michael A. Haase · Saint Paul, US
Todd A. Ballen · Saint Paul, US
Terry L. Smith · Plainfield, US

Key dates

Filing date	Jun 1, 2011
Grant date	Sep 30, 2014
Priority date	—
Expiry date	Jun 1, 2031

Classification

Technology area (CPC H)Electricity
CPC primaryH01S5/347
WIPO fieldSurface technology, coating
WIPO sectorChemistry

Abstract

A multilayer construction is disclosed. The multilayer construction includes a -II-VI semiconductor layer (110)x and a Si3N4 layer (120) disposed directly on the II-VI semiconductor layer. To improve the adhesion of the Si3N4 layer (120) a native oxide on the II-VI semiconductor layer is removed.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.