Wafer cutting method and a system thereof
US8847104B2 · kind B2 · utility
3Cited by
4References
38Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 4, 2009 |
| Grant date | Sep 30, 2014 |
| Priority date | — |
| Expiry date | Aug 30, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T225/304
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
A method for cutting a semiconductor wafer by generating a crack within the wafer, and a system thereof, are provided. The method comprises irradiating a laser beam towards a surface of the wafer and converging the laser beam to form a focal point so that a focal volume defined by the focal point and a boundary of the laser beam within the wafer is formed. Energy encompassed within the focal volume causes the wafer located at the periphery of the focal volume to contract faster than the wafer located within the focal volume, thereby generating a crack within the wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.