Photoelectric conversion element, production method thereof, photosensor, imaging device and their driving method
US8847141B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 3, 2010 |
| Grant date | Sep 30, 2014 |
| Priority date | — |
| Expiry date | Aug 4, 2031 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
To provide a photoelectric conversion element capable of functioning as a photoelectric conversion element when a compound having a specific structure is applied to the photoelectric conversion element, causing the element to exhibit a low dark current, and reducing the range of increase in the dark current even when the element is heat-treated, and an imaging device equipped with such a photoelectric conversion element. A photoelectric conversion element having a photoelectric conversion film which is sandwiched between a transparent electrically conductive film and an electrically conductive film and contains a photoelectric conversion layer and an electron blocking layer, wherein the electron blocking layer contains a compound having, as a substituent, a substituted amino group containing three or more ring structures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.