Sapphire substrate having triangular projections with bottom sides formed of outwardly curved lines
US8847262B2 · kind B2 · utility
4Cited by
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15Claims
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Key dates
| Filing date | Mar 14, 2013 |
| Grant date | Sep 30, 2014 |
| Priority date | — |
| Expiry date | Mar 14, 2033 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24479
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A sapphire substrate having a principal surface for growing a nitride semiconductor to form a nitride semiconductor light emitting device comprises a plurality of projections on the principal surface. Each of the projections has a bottom that has a substantially polygonal shape. Each side of the bottom of the projections has a depression in its center. Vertexes of the bottoms of the respective projections extend in a direction that is within a range of ±10 degrees of a direction that is rotated counter-clockwise by 30 degrees from a crystal axis “a” of the sapphire substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.