Semiconductor light emitting device
US8847266B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 3, 2008 |
| Grant date | Sep 30, 2014 |
| Priority date | — |
| Expiry date | Mar 1, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/819
Abstract
There is provided a semiconductor light emitting device that minimizes reflection or absorption of emitted light, maximizes luminous efficiency with the maximum light emitting area, enables uniform current spreading with a small area electrode, and enables mass production with high reliability and high quality. A semiconductor light emitting device according to an aspect of the invention includes first and second conductivity type semiconductor layers, an active layer formed therebetween, first electrode layer, and a second electrode part electrically connecting the semiconductor layers. The second electrode part includes an electrode pad unit, an electrode extending unit, and an electrode connecting unit connecting the electrode pad unit and electrode extending unit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.