Reverse-conducting power semiconductor device

US8847277B2 · kind B2 · utility

Assignee

• ABB TECHNOLOGY AG · CH

Inventors

• Munaf Rahimo · Uezwil, CH
• Martin Arnold · Cambridge, GB
• Thomas Stiasny · Wädenswil, CH

Key dates

• Filing date: Mar 28, 2013
• Grant date: Sep 30, 2014
• Expiry date: Mar 28, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/142

Abstract

An exemplary reverse-conducting power semiconductor device with a wafer having a first main side and a second main side parallel to the first main side. The device includes a plurality of diode cells and a plurality of IGCT cells, each IGCT cell including between the first and second main side: a first anode electrode, a first anode layer of a first conductivity type on the first anode electrode, a buffer layer of a second conductivity type on the first anode layer, a drift layer of the second conductivity type on the buffer layer, a base layer of the first conductivity type on the drift layer, a first cathode layer of a second conductivity type on the base layer, and a cathode electrode on the first cathode layer. A mixed part includes the second anode layers of the diode cells alternating with the first cathode layers of the IGCT cells.