Compound semiconductor device and method of manufacturing the same
US8847283B2 · kind B2 · utility
12Cited by
1References
21Claims
0Family size
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Key dates
| Filing date | Aug 16, 2013 |
| Grant date | Sep 30, 2014 |
| Priority date | — |
| Expiry date | Aug 16, 2033 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02B70/10
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An AlGaN/GaN HEMT includes: a compound semiconductor layer; a source electrode and a drain electrode formed on an upper side of the compound semiconductor layer; and an Al—Si—N layer being a high-resistance layer disposed in a lower portion of at least one of the source electrode and the drain electrode and higher in an electric resistance value than the source electrode and the drain electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.