Image sensor having moisture absorption barrier layer, fabricating method thereof, and device comprising the image sensor
US8847297B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 23, 2010 |
| Grant date | Sep 30, 2014 |
| Priority date | — |
| Expiry date | Feb 26, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/13091
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Image sensor, fabricating method thereof, and device comprising the image sensor are provided, which comprises a substrate in which a photoelectric transformation device is formed, an interconnection structure formed on the substrate and including multiple intermetal dielectric layers and multiple metal interconnections placed in the multiple intermetal dielectric layers, the interconnection structure defining a cavity aligned corresponding to the photoelectric transformation device, a moisture absorption barrier layer conformally formed on a top of the interconnection structure and in the cavity; and a light guide unit formed on the moisture absorption barrier layer and including light transmittance material filling the cavity, wherein the moisture absorption barrier layer is formed with a uniform thickness on both sides and a bottom of the cavity and on a top surface of the multiple intermetal dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.