Semiconductor device and method for manufacturing semiconductor device
US8847301B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Feb 21, 2012 |
| Grant date | Sep 30, 2014 |
| Priority date | — |
| Expiry date | Feb 21, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B41/35
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A first connection portion and a second connection portion connect a first control gate to a second control gate, and are separated from each other. The first control gate includes a first disconnection portion between the first connection portion and a source diffusion layer closest to the first connection portion. The second control gate includes a second disconnection portion between the second connection portion and the source diffusion layer closest to the second connection portion. A first word gate and a second word gate are not disconnected in portions overlapping the first disconnection portion and the second disconnection portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.