Patent · US Active

Integrated circuit

US8847339B2 · kind B2 · utility

2Cited by

4References

15Claims

0Family size

Assignee

NXP B.V. · NL

Inventors

Matthias Merz · Leuven, BE
Aurelie Humbert · Brussels, BE
David Tio Castro · Heverlee, BE

Key dates

Filing date	Jan 28, 2013
Grant date	Sep 30, 2014
Priority date	—
Expiry date	Jan 28, 2033

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/0002
WIPO fieldMeasurement
WIPO sectorInstruments

Abstract

Disclosed is an integrated circuit comprising a substrate (10) including semiconductor devices and a metallization stack (20) over said substrate for interconnecting said devices, the metallization stack comprising a cavity (36), and a thermal conductivity sensor comprising at least one conductive portion (16, 18) of said metallization stack suspended in said cavity. A method of manufacturing such an IC is also disclosed.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.