Process for fabricating a backside-illuminated imaging device and corresponding device

US8847344B2 · kind B2 · utility

Assignee

• STMicroelectronics (Crolles 2) SAS · FR

Inventors

• Francois Roy · Seyssinet-Pariset, FR
• Francois Leverd · Meylan, FR
• Jens Prima · Gehrde, DE

Key dates

• Filing date: May 30, 2012
• Grant date: Sep 30, 2014
• Expiry date: May 30, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F39/199

Abstract

An integrated imaging device includes a silicon layer provided over a dielectric multilayer. The dielectric multilayer includes a top silicon-dioxide layer, an intermediate silicon-nitride layer and a bottom silicon-dioxide layer. Imaging circuitry is formed at a frontside of the silicon layer. An isolating structure surrounds the imaging circuitry and extends from the frontside through the silicon layer and top silicon-dioxide layer into and terminating within the intermediate silicon-nitride layer. A filter for the imaging circuitry is mounted to a backside of the bottom silicon-dioxide layer. The isolating structure is formed by a trench filled with a dielectric material.