Patent · US Active

Metal-via fuse

US8847350B2 · kind B2 · utility

1Cited by

2References

20Claims

0Family size

Assignee

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventors

Sung-Chieh Lin · Zhubei City, TW
Kuoyuan (Peter) Hsu · San Jose, US
Wei-Li Liao · Taichung, TW
Yun-Han Chen · Cameron Park, US
Chen-Ming Hung · Hengshan, TW

Key dates

Filing date	Aug 30, 2012
Grant date	Sep 30, 2014
Priority date	—
Expiry date	Aug 30, 2032

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/0002
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

The embodiments of methods and structures disclosed herein provide mechanisms of forming and programming a metal-via fuse. The metal-via fuse and a programming transistor form a one-time programmable (OTP) memory cell. The metal-via fuse has a high resistance and can be programmed with a low programming voltage, which expands the programming window.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.