Integrated power amplifier with load inductor located under IC die
US8847351B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 12, 2010 |
| Grant date | Sep 30, 2014 |
| Priority date | — |
| Expiry date | Jan 10, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3011
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A compact integrated power amplifier is described herein. In an exemplary design, an apparatus includes (i) an integrated circuit (IC) die having at least one transistor for a power amplifier and (ii) an IC package having a load inductor for the power amplifier. The IC die is mounted on the IC package with the transistor(s) located over the load inductor. In an exemplary design, the IC die includes a transistor manifold that is placed over the load inductor on the IC package. The transistor(s) are fabricated in the transistor manifold, have a drain connection in the center of the transistor manifold, and have source connections on two sides of the transistor manifold. The IC die and the IC package may include one or more additional power amplifiers. The transistor(s) for each power amplifier may be located over the load inductor for that power amplifier.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.