Opto-electronic device
US8847357B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 9, 2012 |
| Grant date | Sep 30, 2014 |
| Priority date | — |
| Expiry date | Aug 9, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/8162
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present invention provides a current blocking structure for electronic devices, preferably optoelectronic devices. The current blocking structure comprises a semiconductor material arrangement comprising an n-type ruthenium doped indium phosphide (Ru—InP) layer and a first p-type semiconductor material layer wherein the n-type Ru—InP layer is less than 0.6 μm thick. The semiconductor material arrangement and p-type semiconductor material layer form a current blocking p-n junction. The current blocking structure may further comprise other n-type layers and/or multiple n-type Ru—InP layers and/or intrinsic/undoped layers wherein the n-type Ru—InP layers may be thicker than 0.6 μm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.