Semiconductor device, method for manufacturing the same, and data processing device
US8847400B2 · kind B2 · utility
4Cited by
3References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 29, 2012 |
| Grant date | Sep 30, 2014 |
| Priority date | — |
| Expiry date | Sep 24, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/15311
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device comprises a material layer including a first surface and a trench with an opening in the first surface. The trench is formed in the material layer. The trench comprises a tapered portion and a vertical portion. The tapered portion is in contact with the opening and comprises a scalloping-forming trench. The vertical portion has a substantially vertical sidewall. A width of the scalloping-forming trench is larger than a width of the vertical portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.