Patent · US Active

Method for producing piezoelectric thin-film element, piezoelectric thin-film element, and member for piezoelectric thin-film element

US8847470B2 · kind B2 · utility

2Cited by
10References
9Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJan 24, 2013
Grant dateSep 30, 2014
Priority date—
Expiry dateJan 24, 2033

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10N30/01
  • WIPO fieldSurface technology, coating
  • WIPO sectorChemistry

Abstract

Provided is a method for producing a piezoelectric thin-film element including a piezoelectric thin-film layer having good surface morphology and high crystallinity. The method includes forming a lower electrode layer on a substrate; forming a piezoelectric thin-film buffer layer on the lower electrode layer at a relatively low film-formation temperature; forming a piezoelectric thin-film layer on the piezoelectric thin-film buffer layer at a film-formation temperature that is higher than the film-formation temperature for the piezoelectric thin-film buffer layer; and forming an upper electrode layer on the piezoelectric thin-film layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.