High speed low loss gate drive circuit
US8847631B2 · kind B2 · utility
11Cited by
7References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 23, 2011 |
| Grant date | Sep 30, 2014 |
| Priority date | — |
| Expiry date | Dec 23, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K2217/009
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A gate drive circuit includes an insulated gate semiconductor switch. A controlled current source is connected to the semiconductor switch gate terminal to provide a gate drive circuit that is responsive to recycled gate charge corresponding to an internal gate capacitance of the insulated gate semiconductor switch.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.