RF switch with RF pathway charge-discharge circuit and associated method
US8847666B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Aug 29, 2012 |
| Grant date | Sep 30, 2014 |
| Priority date | — |
| Expiry date | Feb 1, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K17/693
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A radio frequency (RF) switch includes a common port, a first port, and a second port, a first semiconductor switching element disposed in a first RF pathway between the common port and the first port, a second semiconductor switching element disposed in a second RF pathway between the common port and the second port, a first pair of direct current (DC) blocking capacitors disposed to isolate the first semiconductor switching element in the first RF pathway, and a second pair of DC blocking capacitors disposed to isolate the second semiconductor switching element in the second RF pathway. The respective pairs of DC blocking capacitors allow for different bias voltages to be applied to the respective RF pathways. A charge-discharge circuit may also be employed to decrease transient switching time of the RF switch.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.