Semiconductor light source apparatus
US8851694B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Mar 7, 2012 |
| Grant date | Oct 7, 2014 |
| Priority date | — |
| Expiry date | Apr 5, 2033 |
Classification
- Technology area (CPC F)Mechanical Engineering; Lighting; Heating
- CPC primaryF21Y2115/30
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A semiconductor light source apparatus can include a clad layer, a phosphor layer surrounded by the clad layer and a laser diode emitting a laser light. The phosphor layer can include a cavity having an opening for receiving the laser light, a phosphor material and a light-emitting surface of the apparatus. The laser light entering into the cavity can repeatedly reflect on an inner surface of the phosphor layer many times, each and every time most of the laser light entering into the phosphor layer. The laser light can be efficiently wavelength-converted by the phosphor material and the wavelength converted light can be emitted from the light-emitting surface having various shapes exposed from the clad layer. Therefore, the disclosed subject matter can include providing semiconductor light source apparatuses having a high light-emitting efficiency and high light-emitting density such that the devices can be used for a headlight, general lighting, etc.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.