Semiconductor light emitting device and method of manufacturing the same
US8852972B2 · kind B2 · utility
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1References
13Claims
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Key dates
| Filing date | Feb 15, 2013 |
| Grant date | Oct 7, 2014 |
| Priority date | — |
| Expiry date | Feb 15, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/0361
Abstract
A method of manufacturing a semiconductor light emitting device, includes forming a conductive film on a surface of a semiconductor light emitting element. Phosphor particles are charged by mixing phosphor particles with an electrolyte having a metallic salt dissolved therein. The semiconductor light emitting element having the conductive film formed thereon is immersed in the electrolyte having the charged phosphor particles. A phosphor layer on the conductive film is formed by electrophoresing the phosphor particles. The conductive film is removed using wet etching.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.