Method for production of selective growth masks using underfill dispensing and sintering
US8853030B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 22, 2013 |
| Grant date | Oct 7, 2014 |
| Priority date | — |
| Expiry date | Jun 4, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/818
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention discloses a method for production of selective growth masks using underfill dispensing and sintering. The method includes steps of: providing a sapphire substrate, growing a gallium nitride base layer on the sapphire substrate, coating a photoresist layer, performing imprint lithography, exposure and development, performing underfill dispensing, and performing sintering. The production method of the present invention can be applied in the atmosphere, and vacuum chambers as known production approaches are unnecessary. The selective growth masks produced by the method of the present invention make the growth of nanowires cylindrical and perpendicular to the gallium nitride base layer, and each nanowire is parallel to one another.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.