Patent · US Active

Manufacturing method of semiconductor substrate

US8853089B2 · kind B2 · utility

2Cited by
0References
22Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJul 5, 2012
Grant dateOct 7, 2014
Priority date—
Expiry dateOct 25, 2032

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D62/393
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A manufacturing method of a semiconductor substrate includes: forming a trench in a semiconductor board by a dry etching method; etching a surface portion of an inner wall of the trench by a chemical etching method so that a first damage layer is removed, wherein the surface portion has a thickness equal to or larger than 50 nanometers; and performing a heat treatment at temperature equal to or higher than 1050° C. in non-oxidizing and non-azotizing gas so that crystallinity of a second damage layer is recovered, wherein the second damage layer is disposed under the first damage layer. The crystallinity around the trench is sufficiently recovered.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.