Method for forming double patterned structure
US8853093B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 7, 2013 |
| Grant date | Oct 7, 2014 |
| Priority date | — |
| Expiry date | Mar 7, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor structure including a double patterned structure and a method for forming the semiconductor structure are provided. A positive photoresist layer is formed on a negative photoresist layer, which is formed over a substrate. An exposure process is performed to form a first exposure region in the positive photoresist layer and to form a second exposure region in the negative photoresist layer in response to a first and a second intensity thresholds of the exposure energy. A positive-tone development process is performed to remove the first exposure region from the positive photoresist layer to form first opening(s). The second exposure region in the negative photoresist layer is then etched along the first opening(s) to form second opening(s) therein. A negative-tone development process is performed to remove portions of the negative photoresist layer outside of remaining second exposure region to form a double patterned negative photoresist layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.