Nonvolatile memory device and manufacturing method thereof
US8853663B2 · kind B2 · utility
5Cited by
1References
14Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Oct 4, 2011 |
| Grant date | Oct 7, 2014 |
| Priority date | — |
| Expiry date | Oct 4, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B63/30
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A nonvolatile memory device is disclosed, in which a first electrode, a first material layer having a positive Peltier coefficient, an information storage layer, a second material layer having a negative Peltier coefficient, and a second electrode are laminated.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.